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MWI 200-06 A8
IGBT Modules
I C25
= 225 A
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
V CES = 600 V
V CE(sat) typ. = 2.0 V
Preliminary data
1
2
5
6
9
10
19
17
15
3
4
7
8
11
12
See outline drawing for pin arrangement
E72873
14, 20
IGBTs
Features
Symbol
V CES
V GES
I C25
Conditions
T VJ = 25°C to 150°C
T C = 25°C
Maximum Ratings
600 V
± 20 V
225 A
€ € NPT IGBT technology
€ € low saturation voltage
€ € low switching losses
€ € switching frequency up to 30 kHz
€ € square RBSOA, no latch up
€ € high short circuit capability
€ € positive temperature coefficient for
I C80
T C = 80°C
155
A
easy parallelling
RBSOA
t SC
(SCSOA)
V GE = ± 15 V; R G = 1.5 Ω ; T VJ = 125°C I CM = 400
Clamped inductive load; L = 100 μH V CEK ≤ V CES
V CE = V CES ; V GE = ± 15 V; R G = 1.5 Ω ; T VJ = 125°C 10
non-repetitive
A
μs
€ € MOS input, voltage controlled
€ € ultra fast free wheeling diodes
€ € solderable pins for PCB mounting
€ € package with copper base plate
Advantages
P tot
Symbol
T C = 25°C
Conditions
675 W
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
€ € space savings
€ € reduced protection circuits
€ € package designed for wave soldering
Typical Applications
V CE(sat)
V GE(th)
I CES
I C = 200 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 4 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25°C
4.5
2.0
2.3
2.5
6.5
1.8
V
V
V
mA
€ € AC motor control
€ € AC servo and robot drives
€ € power supplies
T VJ = 125°C
1.5
mA
I GES
t d(on)
t r
t d(off)
t f
E on
E off
C ies
Q Gon
V CE = 0 V; V GE = ± 20 V
Inductive load, T VJ = 125°C
V CE = 300 V; I C = 200 A
V GE = ±15 V; R G = 1.5 Ω
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 300 V; V GE = 15 V; I C = 200 A
180
50
300
40
4.6
6.3
9.0
670
400
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
R thJC
(per IGBT)
0.18 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
1-2
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